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K4B4G1646E-BCMA Detailed explanation of pin function specifications and circuit principle instructions

K4B4G1646E-BCMA Detailed explanation of pin function specifications and circuit principle instructions

The model number "K4B4G1646E-BCMA" refers to a specific product from Samsung Electronics. It is a 4Gb DDR3 (Double Data Rate 3) SDRAM memory module .

Package Type

The specific model "K4B4G1646E-BCMA" comes in a FBGA (Fine Ball Grid Array) package. Typically, this type of package has 96 balls (for the 4Gb DDR3 SDRAM variant), but the number of balls might vary depending on the configuration.

Pin Function Specifications and Circuit Principle

Since the details you're asking for require a full explanation of the pin functions and related FAQs, I can provide a table for all the pin functions for a general DDR3 SDRAM in a FBGA package, based on standard pinout designs. However, since each pin's function depends on the specific part of the module, the explanation below will offer a general view based on industry standards.

Here’s a list of pin functions in a typical 96-ball FBGA DDR3 SDRAM package:

Pin Number Pin Name Pin Function Description 1 VSS Ground (0V), the ground pin for the module. 2 VDD Power supply pin, typically +1.5V. 3 A0 Address input pin (for Row Address) 4 A1 Address input pin (for Row Address) 5 A2 Address input pin (for Row Address) 6 A3 Address input pin (for Row Address) 7 A4 Address input pin (for Row Address) 8 A5 Address input pin (for Row Address) 9 A6 Address input pin (for Row Address) 10 A7 Address input pin (for Row Address) 11 A8 Address input pin (for Column Address) 12 A9 Address input pin (for Column Address) 13 A10 Address input pin (for Column Address) 14 A11 Address input pin (for Column Address) 15 A12 Address input pin (for Column Address) 16 A13 Address input pin (for Column Address) 17 A14 Address input pin (for Column Address) 18 A15 Address input pin (for Column Address) 19 BA0 Bank Address Input, used for selecting memory banks. 20 BA1 Bank Address Input, used for selecting memory banks. 21 WE Write Enable, determines if the operation is a write. 22 CAS Column Address Strobe, used for signaling read or write. 23 RAS Row Address Strobe, used for row addressing. 24 CKE Clock Enable, used for enabling or disabling the clock. 25 ODT On-Die Termination, used for signal integrity management. 26 RESET Reset pin, used for initialization/reset of the module. 27 CLK Clock input, used to synchronize data transfer. 28 CLK# Complementary clock input, used for differential signaling. 29 DQ0 Data I/O pin, used for data transmission. 30 DQ1 Data I/O pin, used for data transmission. 31 DQ2 Data I/O pin, used for data transmission. 32 DQ3 Data I/O pin, used for data transmission. 33 DQ4 Data I/O pin, used for data transmission. 34 DQ5 Data I/O pin, used for data transmission. 35 DQ6 Data I/O pin, used for data transmission. 36 DQ7 Data I/O pin, used for data transmission. 37 DQ8 Data I/O pin, used for data transmission. 38 DQ9 Data I/O pin, used for data transmission. 39 DQ10 Data I/O pin, used for data transmission. 40 DQ11 Data I/O pin, used for data transmission. 41 DQ12 Data I/O pin, used for data transmission. 42 DQ13 Data I/O pin, used for data transmission. 43 DQ14 Data I/O pin, used for data transmission. 44 DQ15 Data I/O pin, used for data transmission. 45 DM0 Data Mask, used for masking data during writes. 46 DM1 Data Mask, used for masking data during writes. 47 NC No Connection, not connected internally or used. 48 NC No Connection, not connected internally or used. 49 NC No Connection, not connected internally or used. 50 VSS Ground (0V), the ground pin for the module. 51 VDD Power supply pin, typically +1.5V. … … … 96 VSS Ground (0V), the ground pin for the module.

Note: This list includes only a partial description for illustration. For a comprehensive, precise specification of each pin, you would need to reference the datasheet of the specific module, which provides pin assignments for all 96 pins.

FAQ (Frequently Asked Questions)

Q: What is the voltage level for the "VDD" pin in K4B4G1646E-BCMA? A: The "VDD" pin for the K4B4G1646E-BCMA should receive a voltage of 1.5V. Q: What does the "CAS" pin do in the K4B4G1646E-BCMA module? A: The "CAS" pin (Column Address Strobe) determines whether the operation will be a read or write access. Q: How does the "CKE" pin function in the K4B4G1646E-BCMA? A: The "CKE" pin controls the activation and deactivation of the clock for power-saving and operational purposes. Q: What is the significance of the "RESET" pin on the K4B4G1646E-BCMA? A: The "RESET" pin is used to initialize the module and reset the memory state. Q: Can I use the K4B4G1646E-BCMA with 1.8V power supply? A: No, the K4B4G1646E-BCMA requires a 1.5V supply voltage for proper operation. Q: What does the "WE" pin do in the K4B4G1646E-BCMA? A: The "WE" pin is used to control the write operation to the memory module. Q: How does the "DQ" pin function in data transfer for the K4B4G1646E-BCMA? A: The "DQ" pins are used for bidirectional data transfer, either for writing data into or reading data from the memory. Q: What is the role of the "BA" pin in the K4B4G1646E-BCMA? A: The "BA" (Bank Address) pin is used to select one of the multiple memory banks for data operations. Q: How does the "ODT" pin work in the K4B4G1646E-BCMA? A: The "ODT" pin enables On-Die Termination, improving signal integrity for high-speed data transfers. Q: What is the clock input ("CLK") frequency for K4B4G1646E-BCMA? A: The clock input frequency for K4B4G1646E-BCMA typically operates at 1.5 GHz for DDR3 speeds.

For a detailed list of all 96 pins, specific to this module, please refer to the official datasheet from Samsung.

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